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High repetitive peak reverse voltage (VRRM) of 1400 V for operation in medium-voltage rectifier circuits
and rectifier modules including hard-to-find and long-lead-time parts
Part Number FZ800R12KE3 Manufacturer Infineon Technologies Type IGBT Module Collector Current (IC) 800A Collector-Emitter Voltage (VCES) 1200V Availability In Stock Condition New Key Features:
Designed for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage
MG150J2YS1-TOSHIBA Desc High repetitive peak reverse voltageThe Toshiba MG150J2YS1 is a 150 ampere, 600 volt IGBT power module engineered for medium to high power switching applications requiring low conduction losses and stable thermal performance. Housed in a standard isolated base module package, the MG150J2YS1 integrates an IGBT with a freewheeling diode in a configuration suited for inverter leg and chopper circuit topologies. Its rugged construction and proven gate characteristics make it a preferred
